ASML 5000/55A Stepper
| Light Source Illumination | : | I-line (365 nm) |
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| Resolution | : | 0.5 µm |
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| Overlay Accuracy (Layer-to-Layer) |
: | ± 0.1 µm (3 sigma) |
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| Wafer Size | : | 4" or 6" |
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| Field Size | : | 15 mm x 15 mm or 10 mm x 10 mm (on wafer) |
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AB-Manufacturing Contact Aligner
| Light Source Illumination | : | DUV/UV wavelength selectable (500 Watts Mercury DUV lamp) |
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| Alighment | : | Manual |
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| Printing Mode | ||
| Soft Contact | : | Contact vacuum adjustable |
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| Hard Contact | : | Full vacuum contact |
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| Photomask | : | 3" square or 5" square |
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| Substrate Size | : | Small samples larger than 5 mm2 to 4" square |
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| Substrate Loading | : | Manual |
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| No. of Machines Installed | : | 2 |
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| Special Feature | : | Backside alignment using Infra-red |
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Solitec 5110-C/PD Wafer Spinner
| No. of Spin Head | : | 1 |
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| Spin Speed Range | : | 0 to 8000 rpm adjustable |
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| Process Function Support | : | 2 |
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| Coat Sequence | : | Solvent dispense; N2 blow-dry; Resist dispense; Spread; Spin Dry |
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| Develop Sequence | : | Pre-Wet; Develop; Overlap; Rinse; Spin Dry |
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| Substrate | ||
| Wafer | : | Small samples larger than 5 mm2 to 4" square |
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| Mask | : | 4" or 5" square |
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| Wafer Loading | : | Manual |
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| No. of Machines Installed | : | 1 |
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SVG
8626PC/8632CTD Wafer Track
| No. of Tracks | : | 2 |
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| Process Function Support | : | 2 |
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| Track 1 Coat Feature | ||
| Resist Nozzle | : | 3 |
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| Backside Nozzle | : | 1 |
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| Coating Uniformity | : | 25Å (1 sigma) wafer-to-wafer Track 2 Develop Feature |
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| Develop Nozzle | : | 2 |
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| Wafer Size | : | 4" |
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| Wafer Loading/Unloading | : | Auto |
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| No. of Machines Installed | : | 1 |
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Ultra Fab Technology Wet Station
| Wet Processing | : | Silicon Etch using KOH / TMAH (25%) |
| Photoresist Strip / ITO Etch | ||
| Aluminum Etch / Pad Oxide Etch | ||
| Oxide/Nitride Etch | ||
| Wafer Cleaning (RCA) | ||
| Wafer Cleaning (Piranha Clean) | ||
| Solvent cleaning |
Santa
Clara Plastic Wet Processing Stations
| Process Provided | : | Wafer Cleaning (Priani Clean) |
| Wet Metal Etch | ||
| Wet Oxide Etch (BOE Etch) | ||
| Process tank temperature control, &plusmin;1 degree Celsius | ||
| Automatic dump rinser | ||
| Wafer rinser dryer with Nitrogen heater and water resistivity monitor | ||
Tencor 300 Sono Gauge
For wafer thickness measurement and metal film thickness measurement.
Nanometric Model #4150 Film Thickness Measurement System
| Film can be measured | : | Silicon dioxide on silicon 500 - 3,000 Å |
| Silicon Nitride on silicon 500 - 10,000 Å | ||
| Negative resist on silicon 500 - 40,000 Å | ||
| Polysilicon on 1,000 Å silicon dioxide 1,200 - 10,000 Å | ||
| Negative resist on 500 to 15,000 Å silicon oxide 4,000 - 30,000 Å | ||
| Silicon nitride on 700 to 1,500 Å silicon dioxide 700 - 1,500 Å | ||
| Thin oxide on silicon | ||
| Thin silicon nitride on silicon | ||
| Polymide on silicon | ||
| Positive resist on silicon | ||
| Positive resist on silicon dioxide |
Tencor P-10 Surface Profiler
| Scan Range | : | 60mm |
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| Scan Speed | : | 1 µm/s to 25 mm/s adjustable |
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| Vertical Resolution | : | 1 Å / 6.5 µm, 25 Å / 150 µm |
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| Step Profile Depth | : | up to 300µm |
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| Maximum Sample Thickness | : | 63 mm |
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| Stylus Radius | : | 2.5 µm |
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| Stylus Force Range | : | 1 - 100 mg adjustable |
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| Display Magnification | : | 60 to 240x |
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HP 4145B Semiconductor Parameter Analyzer
| In/Out Ports | : | 8 |
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| Source/Monitor Unit | : | 4 |
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| Voltage Source | : | 2 |
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| Voltage Monitor | : | 2 |
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| Voltage Resolution | : | 1 mV |
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| Current Resolution | : | 1 pA |
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| Maximum Voltage | : | 100 V |
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| Measurement Function | : | DC current through voltage-biased or current-biased devices |
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Olympus Microscope MX50 with Camera
| Observation Mode | : | Bright-field / Dark-field / Nomarski DIC / Fluoresence |
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| Magnification | : | 20X - 1000X |
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| No. of Machines | : | 2 |
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Research Devices Infrared Microscope Model F with Camera
| Camera | : | 1.8 micron sensitivity |
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| Observation Mode | : | Visible B&W / Transmission / IR / Reflection IR / Polarized Reflection IR |
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| Magnification | : | 150X - 1000X |
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| No. of Machines | : | 1 |
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